Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, Yun Heub | - |
dc.contributor.author | Park, Seung Young | - |
dc.contributor.author | Lee, Jung Min | - |
dc.contributor.author | Yang, Hyung Jun | - |
dc.contributor.author | Kil, Gyu Hyun | - |
dc.date.accessioned | 2022-07-16T19:27:16Z | - |
dc.date.available | 2022-07-16T19:27:16Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167842 | - |
dc.description.abstract | We propose a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM). An N+/P/N+ bilateral junction device with two bias terminals provides bidirectional current flow enough to write STT MRAM by a drain induced barrier lowering under a reverse bias of N+/P. In addition, asymmetrical doping for two N+ terminals provides a high on-off ratio of 10(7) under read condition, which is acceptable for a crossbar array. From this work, it is expected that a bilateral poly-Si junction will be a promising switch device to achieve crossbar architecture with a perpendicular STT MRAM. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
dc.identifier.doi | 10.1109/LED.2011.2157452 | - |
dc.identifier.scopusid | 2-s2.0-79960928547 | - |
dc.identifier.wosid | 000293710400010 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.32, no.8, pp.1023 - 1025 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 32 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1023 | - |
dc.citation.endPage | 1025 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | SPIN-TRANSFER TORQUE | - |
dc.subject.keywordPlus | VOLTAGE-DEPENDENCE | - |
dc.subject.keywordAuthor | Bidirectional current write | - |
dc.subject.keywordAuthor | crossbar array | - |
dc.subject.keywordAuthor | junction evice | - |
dc.subject.keywordAuthor | spin-transfer torque (STT) magnetic random access memory (MRAM) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5936095 | - |
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