Electrical Characteristics of Nanoscale NAND Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices Fabricated on SOI Substrates
DC Field | Value | Language |
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dc.contributor.author | Ryu, Ju Tae | - |
dc.contributor.author | You, Joo Hyung | - |
dc.contributor.author | Yoo, Keon-Ho | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-07-16T19:39:57Z | - |
dc.date.available | 2022-07-16T19:39:57Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167877 | - |
dc.description.abstract | NAND silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices with double gates fabricated on silicon-on-insulator (SOI) substrates were proposed. The current voltage characteristics related to the programming operation of the designed nanoscale NAND SONOS flash memory devices on a SOI substrate and on the conventional bulk-Si substrate were simulated and compared in order to investigate device characteristics of the scaled-down memory devices. The simulation results showed that the short channel effect and the subthreshod leakage current for the memory device with a large spacer length were lower than that of the memory device with a small spacer length due to increase of the effective channel length. The device performance of the memory device utilizing the SOI substrate exhibited a smaller subthreshold swing and a larger drain current level in comparison with those on the bulk-Si substrate. These improved electrical characteristices for the SOI devices could be explained by comparing the electric field distribution in a channel region for both devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Electrical Characteristics of Nanoscale NAND Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices Fabricated on SOI Substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1166/jnn.2011.4844 | - |
dc.identifier.scopusid | 2-s2.0-84863069549 | - |
dc.identifier.wosid | 000295296400171 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7512 - 7515 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 7512 | - |
dc.citation.endPage | 7515 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | Silicon-on-Insulator | - |
dc.subject.keywordAuthor | NAND | - |
dc.subject.keywordAuthor | Flash Memory | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000008/art00171 | - |
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