Effects of SiO2 Encapsulation and Laser Processing on Single CdTe/ZnTe Quantum Dots Grown on Si (001) Substrates

Abstract

Micro-photoluminescence (mu-PL) measurements are carried out to investigate the effects of SiO2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the PI, peak shift for the 200-nm SiO2 capped single QD is larger than that of the as-grown sample. The large mu-PL peak shift in the 200-nm SiO2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.