Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes
- Authors
- Lee, Jung Min; Jeong, Hae Yong; Choi, Kyoung Jin; Park, Won Il
- Issue Date
- Jul-2011
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.99, no.4, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 99
- Number
- 4
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168103
- DOI
- 10.1063/1.3595941
- ISSN
- 0003-6951
- Abstract
- We demonstrate the use of graphene based transparent sheets as a p-type current spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between graphene and p-type GaN to reduce contact resistance, which reduced contact resistance from similar to 5.5 to similar to 0.6 Omega/ cm(2), with no critical optical loss. As a result, LEDs with metal-graphene provided current spreading and injection into the p-type GaN layer, enabling three times enhanced electroluminescent intensity compared with those with graphene alone. We confirmed very strong blue light emission in a large area of the metal-graphene layer by analyzing image brightness.
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