Charge trapping process of nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites
DC Field | Value | Language |
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dc.contributor.author | Yun, Dong Yeol | - |
dc.contributor.author | Son, Jung Min | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Kim, Sung Woo | - |
dc.contributor.author | Kim, Sang Wook | - |
dc.date.accessioned | 2022-07-16T20:30:29Z | - |
dc.date.available | 2022-07-16T20:30:29Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168339 | - |
dc.description.abstract | Nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated to investigate the variation in the carrier transport mechanisms due to a CdSe shell. Capacitance-voltage (C-V) curves for Al/CdTe nanoparticles embedded in PMMA/p-Si and Al/CdTe-CdSe nanoparticles embedded in PMMA/p-Si devices at 300 K showed that the flatband voltage shift of the C-V curve for the device with the CdTe-CdSe nanoparticles was relatively smaller than that for the device with the CdTe nanoparticle. Carrier transport mechanisms of the memory devices are described by using the C-V results, energy band diagrams, and capacitance-time retentions. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Charge trapping process of nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.3596705 | - |
dc.identifier.scopusid | 2-s2.0-79960573890 | - |
dc.identifier.wosid | 000291803600094 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.24, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | ELEMENTS | - |
dc.subject.keywordPlus | LAYER | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3596705 | - |
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