Effect of selective nanopatterns on the performance of a pentacene-based thin-film transistor
DC Field | Value | Language |
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dc.contributor.author | Yu, Chang-Jae | - |
dc.contributor.author | Lee, You-Jin | - |
dc.contributor.author | Choi, Jong Sun | - |
dc.contributor.author | Kim, Jae-Hoon | - |
dc.date.accessioned | 2022-07-16T20:30:35Z | - |
dc.date.available | 2022-07-16T20:30:35Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168340 | - |
dc.description.abstract | We investigate an effect of selective nanopatterns on the performances of a pentacene-based organic thin-film transistor (OTFT) in a top contact configuration. The one-dimensional nanopatterns onto an insulating layer are selectively formed at the channel and/or the source/drain (S/D) regions using the electron-beam lithography. The performance of the S/D-patterned OTFT was greater than that of the patternless OTFT while the performance of the channel-patterned OTFT was rather less. From Fowler-Nordheim analysis, it is found that the mobility improvement in the nanopatterned OTFTs is mainly originated from the enhanced carrier injection by the nanopatterns at the S/D regions rather than the enhancement of the current flow in the channel region. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Effect of selective nanopatterns on the performance of a pentacene-based thin-film transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Chang-Jae | - |
dc.contributor.affiliatedAuthor | Kim, Jae-Hoon | - |
dc.identifier.doi | 10.1063/1.3598422 | - |
dc.identifier.scopusid | 2-s2.0-79960612830 | - |
dc.identifier.wosid | 000291803600093 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.24, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DIELECTRIC ROUGHNESS | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | LAYER | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3598422 | - |
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