Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer Layer
DC Field | Value | Language |
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dc.contributor.author | Kim, Seon-Yung | - |
dc.contributor.author | Song, Jin Dong | - |
dc.contributor.author | Kim, Tae-Won | - |
dc.date.accessioned | 2022-07-16T20:48:46Z | - |
dc.date.available | 2022-07-16T20:48:46Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168550 | - |
dc.description.abstract | InAs layers on GaAs substrates with AlAs0.32Sb0.68 buffer layers were grown by using molecular beam epitaxy. X-ray diffraction patterns showed that the dominant peaks corresponding to the GaAs, InAs, and AlAs0.32Sb0.68 layers appeared. Atomic force microscopy images showed that the root-mean-square surface roughness of the InAs surface increased with increasing thickness of the InAs layer due to the lattice-constant difference between the InAs and the AlAs0.32Sb0.68 layers, resulting in relaxation of the strain in the InAs layer. Hall effect measurements at 300 K showed that the electron mobility increased with increasing InAs film thickness. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae-Won | - |
dc.identifier.doi | 10.3938/jkps.58.1347 | - |
dc.identifier.wosid | 000290636000023 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1347 - 1350 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 58 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1347 | - |
dc.citation.endPage | 1350 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordAuthor | InAs | - |
dc.subject.keywordAuthor | AlAsSb | - |
dc.subject.keywordAuthor | MBE | - |
dc.subject.keywordAuthor | Structural property | - |
dc.subject.keywordAuthor | Electrical property | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=58&number=5(1)&spage=1347&year=2011 | - |
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