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A novel fault detection circuit for short-circuit faults of IGBT

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dc.contributor.authorKim, Min-Sub-
dc.contributor.authorPark, Byoung-Gun-
dc.contributor.authorKim, Rae-Young-
dc.contributor.authorHyun, Dong-Seok-
dc.date.accessioned2022-07-16T21:02:24Z-
dc.date.available2022-07-16T21:02:24Z-
dc.date.created2021-05-13-
dc.date.issued2011-04-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168714-
dc.description.abstractThis paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-
dc.titleA novel fault detection circuit for short-circuit faults of IGBT-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Rae-Young-
dc.identifier.doi10.1109/APEC.2011.5744621-
dc.identifier.scopusid2-s2.0-79955782311-
dc.identifier.bibliographicCitationConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, pp.359 - 363-
dc.relation.isPartOfConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC-
dc.citation.titleConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC-
dc.citation.startPage359-
dc.citation.endPage363-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCharged voltage-
dc.subject.keywordPlusFault detection circuits-
dc.subject.keywordPlusGate voltages-
dc.subject.keywordPlusInput voltages-
dc.subject.keywordPlusShort-circuit fault-
dc.subject.keywordPlusSimulation result-
dc.subject.keywordPlusInsulated gate bipolar transistors (IGBT)-
dc.subject.keywordPlusPower electronics-
dc.subject.keywordPlusFault detection-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/5744621-
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