A novel fault detection circuit for short-circuit faults of IGBT
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Min-Sub | - |
dc.contributor.author | Park, Byoung-Gun | - |
dc.contributor.author | Kim, Rae-Young | - |
dc.contributor.author | Hyun, Dong-Seok | - |
dc.date.accessioned | 2022-07-16T21:02:24Z | - |
dc.date.available | 2022-07-16T21:02:24Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168714 | - |
dc.description.abstract | This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | A novel fault detection circuit for short-circuit faults of IGBT | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Rae-Young | - |
dc.identifier.doi | 10.1109/APEC.2011.5744621 | - |
dc.identifier.scopusid | 2-s2.0-79955782311 | - |
dc.identifier.bibliographicCitation | Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, pp.359 - 363 | - |
dc.relation.isPartOf | Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | - |
dc.citation.title | Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | - |
dc.citation.startPage | 359 | - |
dc.citation.endPage | 363 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Charged voltage | - |
dc.subject.keywordPlus | Fault detection circuits | - |
dc.subject.keywordPlus | Gate voltages | - |
dc.subject.keywordPlus | Input voltages | - |
dc.subject.keywordPlus | Short-circuit fault | - |
dc.subject.keywordPlus | Simulation result | - |
dc.subject.keywordPlus | Insulated gate bipolar transistors (IGBT) | - |
dc.subject.keywordPlus | Power electronics | - |
dc.subject.keywordPlus | Fault detection | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5744621 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.