Effects of r-plane Sapphire Substrate Tilt Angles on the Growth Behavior of Nonpolar a-plane GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Sung Hyun | - |
dc.contributor.author | Park, Jinsub | - |
dc.contributor.author | Moon, Daeyoung | - |
dc.contributor.author | Kim, Namhyuk | - |
dc.contributor.author | You, Duck-Jae | - |
dc.contributor.author | Kim, Junghwan | - |
dc.contributor.author | Kang, Jinki | - |
dc.contributor.author | Lee, Sang-Moon | - |
dc.contributor.author | Kim, Ju-Sung | - |
dc.contributor.author | Yang, Moon-Seung | - |
dc.contributor.author | Kim, Taek | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.date.accessioned | 2022-07-16T21:13:40Z | - |
dc.date.available | 2022-07-16T21:13:40Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168727 | - |
dc.description.abstract | We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0 degrees to -0.65 degrees toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0 degrees to -0.37 degrees were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37 degrees improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effects of r-plane Sapphire Substrate Tilt Angles on the Growth Behavior of Nonpolar a-plane GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsub | - |
dc.identifier.doi | 10.3938/jkps.58.906 | - |
dc.identifier.scopusid | 2-s2.0-79955072909 | - |
dc.identifier.wosid | 000289611600009 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.4, pp.906 - 910 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 58 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 906 | - |
dc.citation.endPage | 910 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001545052 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | Tilt angle | - |
dc.subject.keywordAuthor | r-plane sapphire | - |
dc.subject.keywordAuthor | a-plane GaN | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=58&number=4(1)&spage=906&year=2011 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.