Dependence of the trap density and the distribution on the current bistability in organic bistable devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | You, Chan Ho | - |
dc.contributor.author | Jung, Jae Hun | - |
dc.contributor.author | Kwak, Jin Ku | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-07-16T21:34:53Z | - |
dc.date.available | 2022-07-16T21:34:53Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168935 | - |
dc.description.abstract | Dependence of the trap density and the distribution on the current bistability in organic bistable devices (OBDs) was investigated by using the space charge limited current (SCLC) model. The single level trap and the Gaussian trap distributions of the SCLC model were used to clarify the electrical bistability of two states with different conductivities. The electrical bistability of the modified SCLC model consisting of two Gaussian distributions with different trap depths provided more accurate results in comparison with that of different models. The calculation results of the current density-voltage characteristics for the OBDs taking into account the parallel resistor were in reasonable agreement with the experimental results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Dependence of the trap density and the distribution on the current bistability in organic bistable devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.cap.2010.11.120 | - |
dc.identifier.scopusid | 2-s2.0-79960903320 | - |
dc.identifier.wosid | 000294208600010 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.2, pp.E40 - E43 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | E40 | - |
dc.citation.endPage | E43 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY DEVICES | - |
dc.subject.keywordPlus | Electric properties | - |
dc.subject.keywordAuthor | Organic layer | - |
dc.subject.keywordAuthor | Organic bistable devices | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173911000307?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.