A CONCURRENT TRIPLE-BAND CMOS LOW NOISE AMPLIFIER FOR FOURTH GENERATION APPLICATIONS
- Authors
- Jang, Yohan; Choi, Jaehoon
- Issue Date
- Feb-2011
- Publisher
- WILEY
- Keywords
- low noise amplifier; concurrent triple resonance; CMOS; LTE; WiMAX
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.53, no.2, pp.415 - 418
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
- Volume
- 53
- Number
- 2
- Start Page
- 415
- End Page
- 418
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169107
- DOI
- 10.1002/mop.25743
- ISSN
- 0895-2477
- Abstract
- In this study, a concurrent triple-band low noise amplifier (LNA) is designed for long term evolution (LTE), Mobile-WiMAX (M-WiMAX), and WiMAX services. The main topology of the proposed LNA is a cascode architecture with source degeneration using shunt resistive feedback topology for the triple-resonance characteristic. The LNA is designed using a Taiwan Semiconductor Company (TSMC) 0.18 mu m radio frequency CMOS process. To obtain the necessary gains over the operating frequency bands, a series LC branch is added in parallel with an inductor at the drain load of a single band LNA. The peak gains at LTE, M-WiMAX, and WiMAX bands are 17.6, 14.7, and 14.5 dB, respectively, whereas dissipating 8 mA from a 1.4 V supply voltage. The average noise figure over the three operating frequency bands is 4.5 dB.
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