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Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices with a Separated Double-Gate Saddle-Type Structure

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dc.contributor.authorPark, Sang Su-
dc.contributor.authorYou, Joo Hyung-
dc.contributor.authorKwack, Kae Dal-
dc.contributor.authorKim, Tae Whan-
dc.date.accessioned2022-07-16T21:51:25Z-
dc.date.available2022-07-16T21:51:25Z-
dc.date.issued2011-02-
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169117-
dc.description.abstractNanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per cell. A simulation results showed that the short channel effect, the cross-talk problem between cells, and the increase in threshold voltage distribution were minimized, resulting in the enhancement of the scaling-down characteristics and the program/erase speed.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Scientific Publishers-
dc.titleNanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices with a Separated Double-Gate Saddle-Type Structure-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1166/jnn.2011.3373-
dc.identifier.scopusid2-s2.0-84863039943-
dc.identifier.wosid000287167900066-
dc.identifier.bibliographicCitationJournal of Nanoscience and Nanotechnology, v.11, no.2, pp 1337 - 1341-
dc.citation.titleJournal of Nanoscience and Nanotechnology-
dc.citation.volume11-
dc.citation.number2-
dc.citation.startPage1337-
dc.citation.endPage1341-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusHIGH-SPEED-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusNVM-
dc.subject.keywordAuthorNAND Flash Memory-
dc.subject.keywordAuthorSaddle-
dc.subject.keywordAuthorDouble-Gate-
dc.subject.keywordAuthorSONOS-
dc.subject.keywordAuthorTwo-Bit/Cell-
dc.subject.keywordAuthorNVM-
dc.identifier.urlhttps://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000002/art00066-
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