Formation mechanisms of ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer due to sputtering and annealing
DC Field | Value | Language |
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dc.contributor.author | Shin, Jae-Won | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.contributor.author | No, Young Soo | - |
dc.contributor.author | Kim, Tae-Won | - |
dc.contributor.author | Choi, Won-Kook | - |
dc.date.accessioned | 2022-07-16T21:52:56Z | - |
dc.date.available | 2022-07-16T21:52:56Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169133 | - |
dc.description.abstract | ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer inserted between a ZnO thin film and a p-Si (100) substrate were formed by magnetron sputtering and thermal annealing. High-resolution transmission electron microscopy (HRTEM) images showed that ZnO nanocrystals were embedded in the Zn2xSi1-xO2 layer inserted into a ZnO/Si heterostructure. The {01 (1) over bar0} planes were observed for the ZnO nanocrystals with a [0001] orientation direction, and the {01 (1) over bar1} and the {0001} planes were observed for the ZnO nanocrystal with a [2 (1) over bar(1) over bar0] orientation direction. The formation of ZnO nanocrystals consisting of the most stable {0001} and (01 (1) over bar1) facet planes was attributed to atomic rearrangement of Zn and 0 atoms to reduce the surface energy during the thermal annealing and the cooling processes. The formation mechanisms for the ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer inserted into a ZnO/p-Si (100) heterostructure were described on the basis of the HRTEM images. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Formation mechanisms of ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer due to sputtering and annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae-Won | - |
dc.identifier.doi | 10.1016/j.jallcom.2010.12.021 | - |
dc.identifier.scopusid | 2-s2.0-78651376693 | - |
dc.identifier.wosid | 000287058100093 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.509, no.6, pp.3132 - 3135 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 509 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 3132 | - |
dc.citation.endPage | 3135 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | LIGHT-EMITTING DEVICES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Oxide materials | - |
dc.subject.keywordAuthor | Semiconductors | - |
dc.subject.keywordAuthor | Surfaces and interfaces | - |
dc.subject.keywordAuthor | Thin films | - |
dc.subject.keywordAuthor | Atomic scale structure | - |
dc.subject.keywordAuthor | Transmission electron microscopy | - |
dc.subject.keywordAuthor | TEM | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925838810029907?via%3Dihub | - |
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