Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mirzaei, Ali | - |
dc.contributor.author | Huh, Jeung-Soo | - |
dc.contributor.author | Kim, Sang Sub | - |
dc.contributor.author | Kim, Hyoun Woo | - |
dc.date.accessioned | 2021-08-02T13:30:04Z | - |
dc.date.available | 2021-08-02T13:30:04Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/16998 | - |
dc.description.abstract | Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyoun Woo | - |
dc.identifier.doi | 10.1007/s13391-018-0033-2 | - |
dc.identifier.scopusid | 2-s2.0-85046103812 | - |
dc.identifier.wosid | 000431125500002 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.14, no.3, pp.261 - 287 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 261 | - |
dc.citation.endPage | 287 | - |
dc.type.rims | ART | - |
dc.type.docType | Review | - |
dc.identifier.kciid | ART002346098 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | X-RAY-DETECTORS | - |
dc.subject.keywordPlus | CADMIUM ZINC TELLURIDE | - |
dc.subject.keywordPlus | BAND-GAP SEMICONDUCTOR | - |
dc.subject.keywordPlus | GAMMA-RAY | - |
dc.subject.keywordPlus | LEAD IODIDE | - |
dc.subject.keywordPlus | CRYSTAL-GROWTH | - |
dc.subject.keywordPlus | MERCURIC IODIDE | - |
dc.subject.keywordPlus | SINGLE-CRYSTALS | - |
dc.subject.keywordPlus | RECENT PROGRESS | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordAuthor | Radiation compound semiconductors | - |
dc.subject.keywordAuthor | X-ray | - |
dc.subject.keywordAuthor | Gamma ray | - |
dc.subject.keywordAuthor | Detector | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s13391-018-0033-2 | - |
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