Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nguyen, Phuong Huyen | - |
dc.contributor.author | Nguyen, Duc Hieu | - |
dc.contributor.author | Kim, Hyojung | - |
dc.contributor.author | Jeong, Hyung Mo | - |
dc.contributor.author | Oh, Hye Min | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.date.accessioned | 2022-07-19T04:46:43Z | - |
dc.date.available | 2022-07-19T04:46:43Z | - |
dc.date.created | 2022-06-03 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/170008 | - |
dc.description.abstract | Despite an appropriate energy bandgap and potential to achieve unipolar p-type from initial ambipolar, the oxidative sensitivity nature of monolayer MoTe2 has hindered its further device development for practical electronic and optoelectronic applications. Here, we demonstrate a facile superacid (TFSI) doping approach to construct a highly stable unipolar p-type MoTe2 at the atomically thin limit, without harnessing its structure. From Raman analysis, a controllable hole-doping effect of MoTe2 is evident by tuning the TFSI molarity (м). Considerable shifts and sharpening in A1g peaks were observed, indicating the p-doping effect induced by TFSI treatment. When combining this technique with PMMA encapsulation, the obtained monolayer MoTe2 field-effect transistor (FET) displays dramatic conversion from ambipolar to unipolar p-type, high on/off ratio of 106, and mobility increases of up to 250 times, which is among the highest mobility increment factor to date. By integrating X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and atomic force microscopy techniques, it is further clarified that the hydrogen bonds between PMMA and TFSI are a key mechanism to enable oxidation prevention while also synergizing the doping effect of TFSI via an efficient electron-withdrawing network on monolayer MoTe2 FET. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1016/j.apsusc.2022.153567 | - |
dc.identifier.scopusid | 2-s2.0-85130091838 | - |
dc.identifier.wosid | 000802544100002 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.596, pp.1 - 9 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 596 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | POLARITY | - |
dc.subject.keywordPlus | YIELD | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordAuthor | Atomically thin TMD | - |
dc.subject.keywordAuthor | Surface charge-transfer doping | - |
dc.subject.keywordAuthor | Hydrogen-bonding interaction | - |
dc.subject.keywordAuthor | Carrier -type modulation | - |
dc.subject.keywordAuthor | Synergistic effect | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433222011199?via%3Dihub | - |
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