Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yalamarthy, Ananth Saran | - |
dc.contributor.author | So, Hongyun | - |
dc.contributor.author | Rojo, Miguel Munoz | - |
dc.contributor.author | Suria, Ateeq J. | - |
dc.contributor.author | Xu, Xiaoqing | - |
dc.contributor.author | Pop, Eric | - |
dc.contributor.author | Senesky, Debbie G. | - |
dc.date.accessioned | 2021-08-02T13:30:19Z | - |
dc.date.available | 2021-08-02T13:30:19Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17011 | - |
dc.description.abstract | Progress in wide bandgap, III-V material systems based on gallium nitride (GaN) has enabled the realization of high-power and high-frequency electronics. Since the highly conductive, 2D electron gas (2DEG) at the aluminum gallium nitride (AlGaN)/GaN interface is based on built-in polarization fields and is confined to nanoscale thicknesses, its charge carriers exhibit much higher mobilities compared to their doped counterparts. This study shows that such 2DEGs also offer the unique ability to manipulate electrical transport separately from thermal transport, through the examination of fully suspended AlGaN/GaN diaphragms of varied GaN buffer layer thickness. Notably, approximate to 100 nm thin GaN layers can considerably impede heat flow without electrical transport degradation. These achieve 4x improvement in the thermoelectric figure of merit (zT) over externally doped GaN, with state-of-the-art power factors of 4-7 mW m(-1) K-2. The remarkable tuning behavior and thermoelectric enhancement, elucidated here for the first time in a polarization-based heterostructure, are achieved because electrons are at the heterostructured interface, while phonons are within the material system. These results highlight the potential for using 2DEGs in III-V materials for on-chip thermal sensing and energy harvesting. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | So, Hongyun | - |
dc.identifier.doi | 10.1002/adfm.201705823 | - |
dc.identifier.scopusid | 2-s2.0-85044715751 | - |
dc.identifier.wosid | 000434030800001 | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.28, no.22, pp.1 - 9 | - |
dc.relation.isPartOf | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 28 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PIEZOELECTRIC POLARIZATION | - |
dc.subject.keywordPlus | GAS | - |
dc.subject.keywordAuthor | 2DEG | - |
dc.subject.keywordAuthor | AlGaN/GaN | - |
dc.subject.keywordAuthor | polarization | - |
dc.subject.keywordAuthor | Seebeck coefficients | - |
dc.subject.keywordAuthor | thermal conductivity | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adfm.201705823 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.