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Analysis of reverse biased electrical property in InGaN Light Emitting Diode by the three-dimensional circuit modeling
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 심종인 | - |
| dc.date.accessioned | 2022-08-08T05:33:33Z | - |
| dc.date.available | 2022-08-08T05:33:33Z | - |
| dc.date.issued | 2009-10-15 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/170458 | - |
| dc.title | Analysis of reverse biased electrical property in InGaN Light Emitting Diode by the three-dimensional circuit modeling | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2009 LED·반도체조명학회 가을 학술대회 | - |
| dc.citation.conferencePlace | 광주 김대중컨벤션 센터 | - |
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)