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Experimental Decomposition of the Positive Gate-bias Temperature Stress-induced Instability and Its Modeling in InGaZnO Thin-film Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2022-08-09T02:08:41Z | - |
| dc.date.available | 2022-08-09T02:08:41Z | - |
| dc.date.issued | 20170830 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/170675 | - |
| dc.title | Experimental Decomposition of the Positive Gate-bias Temperature Stress-induced Instability and Its Modeling in InGaZnO Thin-film Transistors | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Meeting on Information Display (IMID) | - |
| dc.citation.conferencePlace | BEXCO, Busan, Korea | - |
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Related Researcher
- OH, SAE ROON TER
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)