Low-Power a-IGZO TFT Shift Register Featuring i-PUA Gate Dielectric
DC Field | Value | Language |
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dc.contributor.author | Yun, Eseudeo | - |
dc.contributor.author | Kim, Yongchan | - |
dc.contributor.author | Choi, Hanbin | - |
dc.contributor.author | Choi, Dukhyun | - |
dc.contributor.author | Kim, Do Hwan | - |
dc.contributor.author | Lee, Hojin | - |
dc.date.accessioned | 2022-09-19T13:40:28Z | - |
dc.date.available | 2022-09-19T13:40:28Z | - |
dc.date.created | 2022-09-08 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171603 | - |
dc.description.abstract | In this paper, a low-power shift register circuit based on coplanar a-IGZO TFTs using photo-patternable micron-sized i-PUA is proposed for next-generation display. We confirmed that the fabricated shift register circuit consisting of six coplanar a-IGZO TFTs and one capacitor successfully operates with low-power driving within 3 V at various frequencies. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | John Wiley and Sons Inc | - |
dc.title | Low-Power a-IGZO TFT Shift Register Featuring i-PUA Gate Dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Do Hwan | - |
dc.identifier.doi | 10.1002/sdtp.15717 | - |
dc.identifier.scopusid | 2-s2.0-85135626412 | - |
dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.53, no.1, pp.1192 - 1195 | - |
dc.relation.isPartOf | Digest of Technical Papers - SID International Symposium | - |
dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
dc.citation.volume | 53 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1192 | - |
dc.citation.endPage | 1195 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Electric power utilization | - |
dc.subject.keywordPlus | Gate dielectrics | - |
dc.subject.keywordPlus | Low power electronics | - |
dc.subject.keywordPlus | Semiconducting indium compounds | - |
dc.subject.keywordPlus | Shift registers | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | C. thin film transistor (TFT) | - |
dc.subject.keywordPlus | Coplanar structure | - |
dc.subject.keywordPlus | Double layers | - |
dc.subject.keywordPlus | Electric double layer | - |
dc.subject.keywordPlus | Ionic polyurethane acrylate | - |
dc.subject.keywordPlus | Low-power consumption | - |
dc.subject.keywordPlus | Lower-power consumption | - |
dc.subject.keywordPlus | Polyurethane/acrylate | - |
dc.subject.keywordPlus | Solution-processed | - |
dc.subject.keywordPlus | Solution-processed a-IGZO | - |
dc.subject.keywordAuthor | coplanar structure | - |
dc.subject.keywordAuthor | electric double layer | - |
dc.subject.keywordAuthor | ionic polyurethane acrylate (i-PUA) | - |
dc.subject.keywordAuthor | low-power consumption | - |
dc.subject.keywordAuthor | solution-processed a-IGZO | - |
dc.subject.keywordAuthor | Thin film transistors | - |
dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.15717 | - |
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