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Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to thermal treatment
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yuk, Jong Min | - |
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.contributor.author | No, Young Soo | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.contributor.author | Choi, Won Kook | - |
| dc.date.accessioned | 2022-10-07T09:42:11Z | - |
| dc.date.available | 2022-10-07T09:42:11Z | - |
| dc.date.issued | 2008-12 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171754 | - |
| dc.description.abstract | Transmission electron microscopy (TEM), high-resolution TEM, and x-ray energy dispersive spectroscopy results showed that Zn metallic nanocrystals and ZnSiO3 insulating nanocrytals embedded in a SiO2 matrix were created from the ZnO thin films deposited on n-Si (001) substrates due to rapid thermal annealing. The formed Zn metallic nanocrystals were transformed into monoclinic ZnSiO3 insulating nanocrystals with increasing number of Zn atoms resulting from an increase in the annealing time up to 10 min. The transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to rapid thermal annealing are described on the basis of the experimental results. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to thermal treatment | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.3040320 | - |
| dc.identifier.scopusid | 2-s2.0-57349109324 | - |
| dc.identifier.wosid | 000261430600030 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.93, no.22, pp 1 - 3 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 93 | - |
| dc.citation.number | 22 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordAuthor | metal-insulator transition | - |
| dc.subject.keywordAuthor | nanostructured materials | - |
| dc.subject.keywordAuthor | rapid thermal annealing | - |
| dc.subject.keywordAuthor | transmission electron microscopy | - |
| dc.subject.keywordAuthor | X-ray chemical analysis | - |
| dc.subject.keywordAuthor | zinc | - |
| dc.subject.keywordAuthor | zinc compounds | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3040320 | - |
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