20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

Abstract

20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm-gate-length n-/p-type SB-MOSFETs showed large on/off current ratio (>10(6)) with low leakage current less than 10(-5) mu A/mu m due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 mu A/mu m when drain and gate voltages are 2/-2 and 3/-3 V, for the n-/p-type SB-MOSFET, respectively.