Formation mechanisms of GaN nanorods grown on Si(111) substrates
DC Field | Value | Language |
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dc.contributor.author | Kwon, Young H. | - |
dc.contributor.author | Lee, Kyoung Hu | - |
dc.contributor.author | Ryu, Sung Yoon | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | You, Chan Ho | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-10-07T10:10:36Z | - |
dc.date.available | 2022-10-07T10:10:36Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171931 | - |
dc.description.abstract | Scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) images, and selected-area electron diffraction (SAED) patterns showed that vertically well aligned GaN nanorods with c-axis-oriented crystalline wurzite structures were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects and that they were consisted of {(1) over bar1 0 0}, {0 0 0 1}, and {(1) over bar 10} facets. The formation mechanisms for the GaN nanorods grown on Si(1 1 1) substrates are described on the basis of the SEM, TEM, SAED pattern, and HRTEM results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Formation mechanisms of GaN nanorods grown on Si(111) substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.apsusc.2008.05.096 | - |
dc.identifier.scopusid | 2-s2.0-49549100234 | - |
dc.identifier.wosid | 000258997700058 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.254, no.21, pp.7014 - 7017 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 254 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 7014 | - |
dc.citation.endPage | 7017 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordAuthor | GaN nanorods | - |
dc.subject.keywordAuthor | microstructural properties | - |
dc.subject.keywordAuthor | formation mechanism | - |
dc.subject.keywordAuthor | hydride vapor phase epitaxy | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433208011707?via%3Dihub | - |
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