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Dependence of ferromagnetic properties on conductivity for As-doped p-type (Zn0.93Mn0.07)O layers

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dc.contributor.authorLee, Sejoon-
dc.contributor.authorShon, Yoon-
dc.contributor.authorKang, Tae Won-
dc.contributor.authorYoon, Chong S.-
dc.contributor.authorKim, Eun Kyu-
dc.contributor.authorKim, Deuk Young-
dc.date.accessioned2022-10-07T10:15:59Z-
dc.date.available2022-10-07T10:15:59Z-
dc.date.created2022-08-26-
dc.date.issued2008-07-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171987-
dc.description.abstractThe As-doped p-type (Zn0.93Mn0.07)O layers show a strong dependence of their ferromagnetic properties on the hole conductivity that were controlled through the modification of negative background-charge density by changing the oxygen partial pressure during the initial growth stage before As doping. Curie temperature and spontaneous magnetization were observed to be increased as the hole conductivity increases. This result was confirmed to originate from stabilizations of incorporated Mn2+ ions and doped As acceptors, which can give rise to long-range ferromagnetic coupling.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleDependence of ferromagnetic properties on conductivity for As-doped p-type (Zn0.93Mn0.07)O layers-
dc.typeArticle-
dc.contributor.affiliatedAuthorYoon, Chong S.-
dc.contributor.affiliatedAuthorKim, Eun Kyu-
dc.identifier.doi10.1063/1.2957027-
dc.identifier.scopusid2-s2.0-47549095201-
dc.identifier.wosid000257796100062-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.93, no.2, pp.1 - 3-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume93-
dc.citation.number2-
dc.citation.startPage1-
dc.citation.endPage3-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusMAGNETIC SEMICONDUCTORS-
dc.subject.keywordPlusZNO-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusPRESSURE-
dc.subject.keywordPlusAL-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.2957027-
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서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles

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