Dependence of ferromagnetic properties on conductivity for As-doped p-type (Zn0.93Mn0.07)O layers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sejoon | - |
dc.contributor.author | Shon, Yoon | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Yoon, Chong S. | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Kim, Deuk Young | - |
dc.date.accessioned | 2022-10-07T10:15:59Z | - |
dc.date.available | 2022-10-07T10:15:59Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171987 | - |
dc.description.abstract | The As-doped p-type (Zn0.93Mn0.07)O layers show a strong dependence of their ferromagnetic properties on the hole conductivity that were controlled through the modification of negative background-charge density by changing the oxygen partial pressure during the initial growth stage before As doping. Curie temperature and spontaneous magnetization were observed to be increased as the hole conductivity increases. This result was confirmed to originate from stabilizations of incorporated Mn2+ ions and doped As acceptors, which can give rise to long-range ferromagnetic coupling. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Dependence of ferromagnetic properties on conductivity for As-doped p-type (Zn0.93Mn0.07)O layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Chong S. | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1063/1.2957027 | - |
dc.identifier.scopusid | 2-s2.0-47549095201 | - |
dc.identifier.wosid | 000257796100062 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.2, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 93 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MAGNETIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PRESSURE | - |
dc.subject.keywordPlus | AL | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2957027 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.