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Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method

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dc.contributor.authorKim, Jae-Hoon-
dc.contributor.authorSong, Hooyoung-
dc.contributor.authorKim, Eun Kyu-
dc.contributor.authorLee, Sejoon-
dc.contributor.authorShon, Yoon-
dc.date.accessioned2022-10-07T10:28:54Z-
dc.date.available2022-10-07T10:28:54Z-
dc.date.issued2008-05-
dc.identifier.issn1938-5862-
dc.identifier.issn1938-6737-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172043-
dc.description.abstractHigh quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 1018 cm-3. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and E c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherElectrochemical Society, Inc.-
dc.titleElectrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1149/1.2985840-
dc.identifier.scopusid2-s2.0-63149184740-
dc.identifier.bibliographicCitationECS Transactions, v.16, no.12, pp 27 - 31-
dc.citation.titleECS Transactions-
dc.citation.volume16-
dc.citation.number12-
dc.citation.startPage27-
dc.citation.endPage31-
dc.type.docTypeConference Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCapacitance-voltage measurements-
dc.subject.keywordPlusDeep-level transient spectroscopies-
dc.subject.keywordPlusElectrical measurements-
dc.subject.keywordPlusElectrical properties-
dc.subject.keywordPlusHigh qualities-
dc.subject.keywordPlusMagnetic elements-
dc.subject.keywordPlusN-type semiconductors-
dc.subject.keywordPlusPulsed lasers-
dc.subject.keywordPlusWurtzite structures-
dc.subject.keywordPlusXrd measurements-
dc.subject.keywordPlusZnO films-
dc.subject.keywordPlusCarrier concentration-
dc.subject.keywordPlusCrystal structure-
dc.subject.keywordPlusDeep level transient spectroscopy-
dc.subject.keywordPlusElectric properties-
dc.subject.keywordPlusManganese-
dc.subject.keywordPlusManganese compounds-
dc.subject.keywordPlusNanobelts-
dc.subject.keywordPlusNanosensors-
dc.subject.keywordPlusNanowires-
dc.subject.keywordPlusOxygen-
dc.subject.keywordPlusOxygen vacancies-
dc.subject.keywordPlusPulsed laser deposition-
dc.subject.keywordPlusSemiconducting zinc compounds-
dc.subject.keywordPlusSemiconductor lasers-
dc.subject.keywordPlusSingle crystals-
dc.subject.keywordPlusThermoelectric equipment-
dc.subject.keywordPlusThin films-
dc.subject.keywordPlusWire-
dc.subject.keywordPlusZinc-
dc.subject.keywordPlusZinc oxide-
dc.subject.keywordPlusZinc sulfide-
dc.subject.keywordPlusCobalt-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/1.2985840-
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