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Orientations of polycrystalline ZnO at the buried interface of oxide thin film transistors (TFTs): A grazing incidence X-ray diffraction study

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dc.contributor.authorKim, Joo Hyung-
dc.contributor.authorPark, SHK-
dc.contributor.authorJeong, HY-
dc.contributor.authorPark, C-
dc.contributor.authorChoi, SY-
dc.contributor.authorChoi, JY-
dc.contributor.authorHan, SH-
dc.contributor.authorYoon, TH-
dc.date.accessioned2022-10-07T10:35:22Z-
dc.date.available2022-10-07T10:35:22Z-
dc.date.issued2008-04-
dc.identifier.issn0253-2964-
dc.identifier.issn1229-5949-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172103-
dc.format.extent2-
dc.language영어-
dc.language.isoENG-
dc.publisher대한화학회-
dc.titleOrientations of polycrystalline ZnO at the buried interface of oxide thin film transistors (TFTs): A grazing incidence X-ray diffraction study-
dc.typeArticle-
dc.publisher.location대한민국-
dc.identifier.doi10.5012/bkcs.2008.29.4.727-
dc.identifier.scopusid2-s2.0-44149125281-
dc.identifier.wosid000256000700003-
dc.identifier.bibliographicCitationBulletin of the Korean Chemical Society, v.29, no.4, pp 727 - 728-
dc.citation.titleBulletin of the Korean Chemical Society-
dc.citation.volume29-
dc.citation.number4-
dc.citation.startPage727-
dc.citation.endPage728-
dc.type.docTypeArticle-
dc.identifier.kciidART001235726-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.subject.keywordAuthorgrazing-incidence X-ray diffraction-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorthin film transistors-
dc.identifier.urlhttp://koreascience.or.kr/article/JAKO200802727300818.page-
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서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
서울 공과대학 > 서울 공학교육혁신센터 > 1. Journal Articles

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