The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe/ZnTe quantum dots

Abstract

Photoluminescence spectra showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the CdTe/ZnTe quantum dots (QDs) was shifted to a higher energy with increasing thickness of the ZnTe cap layer. The intensity of the excitonic peak related to the E-1-HH1 transition for the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer. The activation energy of the electrons confined in the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer.