Formation and electrical bistability properties of ZnO nanoparticles embedded in polyimide nanocomposites sandwiched between two C-60 layers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Fushan | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Dong, Wenguo | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.date.accessioned | 2022-10-07T10:43:47Z | - |
dc.date.available | 2022-10-07T10:43:47Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172177 | - |
dc.description.abstract | The electrical bistability of the memory device based on ZnO nanoparticles embedded in a polyimide (PI) layer was investigated. Transmission electron microscopy and selected area electron diffraction pattern measurements showed that ZnO nanocrystals were formed inside the PI layer. Current-voltage measurements on Al/C-60/ZnO nanoparticles embedded in PI layer/C-60/indium tin oxide structures at 300 K showed a current bistability with a large on/off ratio of 10(4). The current-voltage hysteresis characteristics at negative voltages could be modified by varying the applied positive erasing voltage. The memory device fabricated utilizing ZnO nanoparticles embedded in a PI layer exhibited excellent environmental stability at ambient conditions. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Formation and electrical bistability properties of ZnO nanoparticles embedded in polyimide nanocomposites sandwiched between two C-60 layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.1063/1.2830617 | - |
dc.identifier.scopusid | 2-s2.0-38049066949 | - |
dc.identifier.wosid | 000252284200044 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.92, no.1, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 92 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.identifier.url | https://aip.scitation.org/doi/full/10.1063/1.2830617 | - |
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