Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm
DC Field | Value | Language |
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dc.contributor.author | Choi, Chel-Jong | - |
dc.contributor.author | Jang, Myung-Gil | - |
dc.contributor.author | Kim, Yark Yeon | - |
dc.contributor.author | Jun, Myung-Sim | - |
dc.contributor.author | Kim, Tae-Youb | - |
dc.contributor.author | Lee, Seongjae | - |
dc.date.accessioned | 2022-10-07T10:44:38Z | - |
dc.date.available | 2022-10-07T10:44:38Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172185 | - |
dc.description.abstract | The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20 nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seongjae | - |
dc.identifier.doi | 10.1049/el:20081645 | - |
dc.identifier.scopusid | 2-s2.0-38649126886 | - |
dc.identifier.wosid | 000252959500059 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.44, no.2, pp.159 - 160 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 44 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 159 | - |
dc.citation.endPage | 160 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | GATE | - |
dc.identifier.url | https://digital-library.theiet.org/content/journals/10.1049/el_20081645 | - |
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