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Ultrasensitive, label-free, and real-time immunodetection using silicon field-effect transistors

Authors
Kim, AnsoonAh, Chil SeongYu, Han YoungYang, Jong-HeonBaek, In-BokAhn, Chang-GuenPark, Chan WooJun, Myung SimLee, Sungjae
Issue Date
Sep-2007
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.91, no.10, pp.1 - 4
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
91
Number
10
Start Page
1
End Page
4
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172246
DOI
10.1063/1.2779965
ISSN
0003-6951
Abstract
Ultrasensitive, label-free, and real-time prostate-specific antigen (PSA) sensor was developed using n-type silicon nanowire-based structures configured as field-effect transistors using the conventional "top-down" semiconductor processes. Specific binding of PSA with antibody of PSA (anti-PSA) immobilized on the Si surface through covalent linkage leads to a conductivity change in response to variations of electric field at the surface. The conductance changes depending on PSA concentrations and pH values in solution according to isoelectric point of PSA provide the evidence of the real-time detection of 1 fg/ml PSA. The authors also explored the sensitivity of PSA immunodetection depending on both Si-field-effect transistors (FET) dimensions and doping concentrations to provide strategy for fabrication of an ultrasensitive Si-FET biosensor.
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