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Organic bistable devices based on core/shell CdSe/ZnS nanoparticles embedded in a conducting poly(N-vinylcarbazole) polymer layer

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dc.contributor.authorLi, Fushan-
dc.contributor.authorSon, Dong-Ik-
dc.contributor.authorSeo, Seung-Mi-
dc.contributor.authorCha, Han-Moe-
dc.contributor.authorKim, Hyuk-Ju-
dc.contributor.authorKim, Bong-Jun-
dc.contributor.authorJung, Jae Hun-
dc.contributor.authorKim, Tae Whan-
dc.date.accessioned2022-10-07T10:57:52Z-
dc.date.available2022-10-07T10:57:52Z-
dc.date.created2022-08-26-
dc.date.issued2007-09-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172250-
dc.description.abstractCurrent-voltage measurements on the Al/[CdSe/ZnS nanoparticles embedded in a hole-transporting poly(N-vinylcarbazole) (PVK) layer]/indium tin oxide (ITO)/glass structures at 300 K showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the Al/[CdSe/ZnS nanoparticles embedded in a PVK layer]/ITO/glass structures at 300 K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the CdSe nanoparticles. Operating mechanisms for the Al/[CdSe/ZnS nanoparticles embedded in the PVK layer]/ITO/glass devices are described on the basis of the C-V results.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleOrganic bistable devices based on core/shell CdSe/ZnS nanoparticles embedded in a conducting poly(N-vinylcarbazole) polymer layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Whan-
dc.identifier.doi10.1063/1.2783189-
dc.identifier.scopusid2-s2.0-34648826740-
dc.identifier.wosid000249667200056-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.91, no.12, pp.1 - 4-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume91-
dc.citation.number12-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusQUANTUM-DOT-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusCELLS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusENERGY-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.2783189-
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