Organic bistable devices based on core/shell CdSe/ZnS nanoparticles embedded in a conducting poly(N-vinylcarbazole) polymer layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Fushan | - |
dc.contributor.author | Son, Dong-Ik | - |
dc.contributor.author | Seo, Seung-Mi | - |
dc.contributor.author | Cha, Han-Moe | - |
dc.contributor.author | Kim, Hyuk-Ju | - |
dc.contributor.author | Kim, Bong-Jun | - |
dc.contributor.author | Jung, Jae Hun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-10-07T10:57:52Z | - |
dc.date.available | 2022-10-07T10:57:52Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-09 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172250 | - |
dc.description.abstract | Current-voltage measurements on the Al/[CdSe/ZnS nanoparticles embedded in a hole-transporting poly(N-vinylcarbazole) (PVK) layer]/indium tin oxide (ITO)/glass structures at 300 K showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the Al/[CdSe/ZnS nanoparticles embedded in a PVK layer]/ITO/glass structures at 300 K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the CdSe nanoparticles. Operating mechanisms for the Al/[CdSe/ZnS nanoparticles embedded in the PVK layer]/ITO/glass devices are described on the basis of the C-V results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Organic bistable devices based on core/shell CdSe/ZnS nanoparticles embedded in a conducting poly(N-vinylcarbazole) polymer layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.2783189 | - |
dc.identifier.scopusid | 2-s2.0-34648826740 | - |
dc.identifier.wosid | 000249667200056 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.91, no.12, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 91 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | QUANTUM-DOT | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | ELECTROLUMINESCENCE | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ENERGY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2783189 | - |
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