Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Min Seung | - |
dc.contributor.author | Kim, Jae-Hoon | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Koo, Hyun-Mo | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.contributor.author | Kim, Won Mok | - |
dc.date.accessioned | 2022-10-07T11:32:40Z | - |
dc.date.available | 2022-10-07T11:32:40Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-02 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172342 | - |
dc.description.abstract | Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators were fabricated. The tunneling SiO1.3N insulator, Au nanoparticles, and control SiO1.3N insulator were sequentially deposited by digital sputtering method at 300 degrees C. The size of Au nanoparticles was controlled in the range of 1-5 nm by adjusting the deposition thickness of Au layer and the density of Au nanoparticles was approximately 1.5x10(12) cm(-2). A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of Au particles and the memory window was larger than 2.5 V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1063/1.2711772 | - |
dc.identifier.scopusid | 2-s2.0-33847661428 | - |
dc.identifier.wosid | 000244591700113 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.90, no.9, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 90 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDE-SEMICONDUCTOR STRUCTURES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2711772 | - |
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