Cited 0 time in
Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Young Min | - |
| dc.contributor.author | Roh, Hee-Ra | - |
| dc.contributor.author | Kim, Sungtae | - |
| dc.contributor.author | Kim, Young-Ho | - |
| dc.date.accessioned | 2022-12-20T10:50:55Z | - |
| dc.date.available | 2022-12-20T10:50:55Z | - |
| dc.date.issued | 2010-12 | - |
| dc.identifier.issn | 0361-5235 | - |
| dc.identifier.issn | 1543-186X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173373 | - |
| dc.description.abstract | The growth kinetics of an intermetallic compound (IMC) layer formed between Sn-3.5Ag-0.5Cu (SAC) solders and Cu-Zn alloy substrates was investigated for samples aged at different temperatures. Scallop-shaped Cu6Sn5 formed after soldering by dipping Cu or Cu-10 wt.%Zn wires into the molten solder at 260A degrees C. Isothermal aging was performed at 120A degrees C, 150A degrees C, and 180A degrees C for up to 2000 h. During the aging process, the morphology of Cu6Sn5 changed to a planar type in both specimens. Typical bilayer of Cu6Sn5 and Cu3Sn and numerous microvoids were formed at the SAC/Cu interfaces after aging, while Cu3Sn and microvoids were not observed at the SAC/Cu-Zn interfaces. IMC growth on the Cu substrate was controlled by volume diffusion in all conditions. In contrast, IMC growth on Cu-Zn specimens was controlled by interfacial reaction for a short aging time and volume diffusion kinetics for a long aging time. The growth rate of IMCs on Cu-Zn substrates was much slower due to the larger activation energy and the lower layer growth coefficient for the growth of Cu-Sn IMCs. This effect was more prominent at higher aging temperatures. | - |
| dc.format.extent | 9 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1007/s11664-010-1379-x | - |
| dc.identifier.scopusid | 2-s2.0-78049500125 | - |
| dc.identifier.wosid | 000283509000002 | - |
| dc.identifier.bibliographicCitation | Journal of Electronic Materials, v.39, no.12, pp 2504 - 2512 | - |
| dc.citation.title | Journal of Electronic Materials | - |
| dc.citation.volume | 39 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 2504 | - |
| dc.citation.endPage | 2512 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | SN-AG-CU | - |
| dc.subject.keywordPlus | PB-FREE SOLDERS | - |
| dc.subject.keywordPlus | SN-3.5AG SOLDER | - |
| dc.subject.keywordPlus | EUTECTIC SNPB | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | RELIABILITY | - |
| dc.subject.keywordPlus | WETTABILITY | - |
| dc.subject.keywordPlus | LAYER | - |
| dc.subject.keywordAuthor | Cu-Zn alloy | - |
| dc.subject.keywordAuthor | intermetallic compound | - |
| dc.subject.keywordAuthor | microvoids | - |
| dc.subject.keywordAuthor | kinetics | - |
| dc.subject.keywordAuthor | activation energy | - |
| dc.identifier.url | https://link.springer.com/article/10.1007/s11664-010-1379-x | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366
COPYRIGHT © 2024 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
