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Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates

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dc.contributor.authorKim, Young Min-
dc.contributor.authorRoh, Hee-Ra-
dc.contributor.authorKim, Sungtae-
dc.contributor.authorKim, Young-Ho-
dc.date.accessioned2022-12-20T10:50:55Z-
dc.date.available2022-12-20T10:50:55Z-
dc.date.issued2010-12-
dc.identifier.issn0361-5235-
dc.identifier.issn1543-186X-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173373-
dc.description.abstractThe growth kinetics of an intermetallic compound (IMC) layer formed between Sn-3.5Ag-0.5Cu (SAC) solders and Cu-Zn alloy substrates was investigated for samples aged at different temperatures. Scallop-shaped Cu6Sn5 formed after soldering by dipping Cu or Cu-10 wt.%Zn wires into the molten solder at 260A degrees C. Isothermal aging was performed at 120A degrees C, 150A degrees C, and 180A degrees C for up to 2000 h. During the aging process, the morphology of Cu6Sn5 changed to a planar type in both specimens. Typical bilayer of Cu6Sn5 and Cu3Sn and numerous microvoids were formed at the SAC/Cu interfaces after aging, while Cu3Sn and microvoids were not observed at the SAC/Cu-Zn interfaces. IMC growth on the Cu substrate was controlled by volume diffusion in all conditions. In contrast, IMC growth on Cu-Zn specimens was controlled by interfacial reaction for a short aging time and volume diffusion kinetics for a long aging time. The growth rate of IMCs on Cu-Zn substrates was much slower due to the larger activation energy and the lower layer growth coefficient for the growth of Cu-Sn IMCs. This effect was more prominent at higher aging temperatures.-
dc.format.extent9-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleKinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1007/s11664-010-1379-x-
dc.identifier.scopusid2-s2.0-78049500125-
dc.identifier.wosid000283509000002-
dc.identifier.bibliographicCitationJournal of Electronic Materials, v.39, no.12, pp 2504 - 2512-
dc.citation.titleJournal of Electronic Materials-
dc.citation.volume39-
dc.citation.number12-
dc.citation.startPage2504-
dc.citation.endPage2512-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSN-AG-CU-
dc.subject.keywordPlusPB-FREE SOLDERS-
dc.subject.keywordPlusSN-3.5AG SOLDER-
dc.subject.keywordPlusEUTECTIC SNPB-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusRELIABILITY-
dc.subject.keywordPlusWETTABILITY-
dc.subject.keywordPlusLAYER-
dc.subject.keywordAuthorCu-Zn alloy-
dc.subject.keywordAuthorintermetallic compound-
dc.subject.keywordAuthormicrovoids-
dc.subject.keywordAuthorkinetics-
dc.subject.keywordAuthoractivation energy-
dc.identifier.urlhttps://link.springer.com/article/10.1007/s11664-010-1379-x-
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