Four-level Nonvolatile Small-molecule Memory-cell Embedded with Fe Nanocrystals Surrounded with an FeO and Fe2O3 Tunneling Barrier
DC Field | Value | Language |
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dc.contributor.author | Seo, Sung-Ho | - |
dc.contributor.author | Nam, Woo-Sik | - |
dc.contributor.author | Park, Kwang-Hee | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-12-20T10:54:38Z | - |
dc.date.available | 2022-12-20T10:54:38Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2010-12 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173410 | - |
dc.description.abstract | We developed a nonvolatile cross-bar 4F(2) small molecule (Alq(3): aluminum tris (8-hydroxyquinoline)) memory cell embedded with Fe nanocrystals surrounded by an FeO and Fe2O3 tunneling barrier. The memory, cell demonstrates a memory margin (I-on/I-off ratio) of similar to 7.44 x 10(2) and a retention-time of similar to 10(5) sec for four current levels (I-off: 2.73 x 10(-8), I-int2: 5.87 x 10(-7), I-int1: 3.64 x 10(-6), and I-on: 2.03 x 10(-5) A), which can probably be extended to ten years. Memory cells of this type follow a current conduction mechanism with space-charge-limited-current and F-N tunneling for nonvolatile memory cell operation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Four-level Nonvolatile Small-molecule Memory-cell Embedded with Fe Nanocrystals Surrounded with an FeO and Fe2O3 Tunneling Barrier | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.3938/jkps.57.1426 | - |
dc.identifier.scopusid | 2-s2.0-78650352299 | - |
dc.identifier.wosid | 000285486100018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.6, pp.1426 - 1431 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 57 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1426 | - |
dc.citation.endPage | 1431 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001501129 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | RAY PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.subject.keywordPlus | NIO | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Small molecule | - |
dc.subject.keywordAuthor | Fe nanocrystal | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=57&number=6&spage=1426&year=2010 | - |
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