Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer
DC Field | Value | Language |
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dc.contributor.author | Song, Hooyoung | - |
dc.contributor.author | Suh, Jooyoung | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.date.accessioned | 2022-12-20T11:36:45Z | - |
dc.date.available | 2022-12-20T11:36:45Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2010-10 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173663 | - |
dc.description.abstract | Nonpolar (1 1-20) a-plane GaN films have been grown using the multi-buffer layer technique on (1-1 0 2) r-plane sapphire substrates. In order to obtain epitaxial a-plane GaN films, optimized growth condition of the multi-buffer layer was investigated using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy measurements. The experimental results showed that the growth conditions of nucleation layer and three-dimensional growth layer significantly affect the crystal quality of subsequently grown a-plane GaN films. At the optimized growth conditions, omega full-width at half maximum values of (11-20) X-ray rocking curve along c- and m-axes were 430 and 530 arcsec, respectively. From the results of transmission electron microscopy, it was suggested that the high crystal quality of the a-plane GaN film can be obtained from dislocation bending and annihilation by controlling of the island growth mode. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2010.08.004 | - |
dc.identifier.scopusid | 2-s2.0-77956880946 | - |
dc.identifier.wosid | 000286407100013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.312, no.21, pp.3122 - 3126 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 312 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 3122 | - |
dc.citation.endPage | 3126 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | FIELDS | - |
dc.subject.keywordPlus | MOCVD | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | Metal-organic chemical vapor deposition | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024810005233?via%3Dihub | - |
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