Aqueous synthesis of n-/p-type ZnO nanorods on porous silicon for the application of p-n junction device
DC Field | Value | Language |
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dc.contributor.author | Parka, Eunkyung | - |
dc.contributor.author | Lee, Jungwoo | - |
dc.contributor.author | Park, Taehee | - |
dc.contributor.author | Lee, Jongtaek | - |
dc.contributor.author | Lee, Donghwan | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.contributor.author | Yi, Whikun | - |
dc.date.accessioned | 2022-12-20T16:07:07Z | - |
dc.date.available | 2022-12-20T16:07:07Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174301 | - |
dc.description.abstract | Zinc oxide (ZnO) nanorods have shown very unique properties for applications such as field emission (FE), light emitting diode (LED), transparent film of solar cell. In general, as-synthesized ZnO nanorods have n-type semiconducting properties. Many researchers have tried to grow p-type ZnO naorods for making p-n junction device. The construction of p-n junction device using ZnO nanoroads is limited by producing ptype ZnO nanorods. In this work, chemical bath deposition (CBD) is used to synthesize ZnO nanorods, Before CBD a seed layer is produced by atomic layer deposition (ALD) on n-type porous silicon (PS) To fabricate p-type ZnO nanorods, nitrogen (N) from NH3 is used as doping material during seeding process. The ZnO nanorods are aligned vertically with uniform shape and length on the PS substrate. This approach opens the possibility of creating standard p-n junction device for applications as sensor arrays, piezoelectric antenna arrays, optoelectronic devices, and interconnects. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Aqueous synthesis of n-/p-type ZnO nanorods on porous silicon for the application of p-n junction device | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yi, Whikun | - |
dc.identifier.doi | 10.1109/NANO.2010.5698022 | - |
dc.identifier.scopusid | 2-s2.0-79951845431 | - |
dc.identifier.bibliographicCitation | 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.974 - 977 | - |
dc.relation.isPartOf | 2010 10th IEEE Conference on Nanotechnology, NANO 2010 | - |
dc.citation.title | 2010 10th IEEE Conference on Nanotechnology, NANO 2010 | - |
dc.citation.startPage | 974 | - |
dc.citation.endPage | 977 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Aqueous synthesis | - |
dc.subject.keywordPlus | As doping | - |
dc.subject.keywordPlus | Chemical-bath deposition | - |
dc.subject.keywordPlus | P type ZnO | - |
dc.subject.keywordPlus | P-n junction | - |
dc.subject.keywordPlus | Seed layer | - |
dc.subject.keywordPlus | Seeding process | - |
dc.subject.keywordPlus | Semi-conducting property | - |
dc.subject.keywordPlus | Transparent films | - |
dc.subject.keywordPlus | ZnO | - |
dc.subject.keywordPlus | ZnO nanorod | - |
dc.subject.keywordPlus | Antenna arrays | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Field emission | - |
dc.subject.keywordPlus | Light emitting diodes | - |
dc.subject.keywordPlus | Nanorods | - |
dc.subject.keywordPlus | Nanotechnology | - |
dc.subject.keywordPlus | Optoelectronic devices | - |
dc.subject.keywordPlus | Semiconductor junctions | - |
dc.subject.keywordPlus | Sensor arrays | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Porous silicon | - |
dc.subject.keywordAuthor | Chemical bath deposition | - |
dc.subject.keywordAuthor | P-n junction | - |
dc.subject.keywordAuthor | Porous silicon | - |
dc.subject.keywordAuthor | ZnO nanorod | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5698022 | - |
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