Charge trapping in hybrid electroluminescence device containing CdSe/ZnS quantum dots embedded in a conducting poly(N-vinylcarbozole) layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Fushan | - |
dc.contributor.author | Guo, Tailiang | - |
dc.contributor.author | Kim, Taewhan | - |
dc.date.accessioned | 2022-12-20T16:15:46Z | - |
dc.date.available | 2022-12-20T16:15:46Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174385 | - |
dc.description.abstract | Charge transport in a multilayer hybrid electroluminescence (EL) device containing CdSe/ZnS quantum dots (QDs) embedded in hole-transporting poly(N-vinylcarbozole) (PVK) layer was investigated. The current-voltage (I-V) curve exhibited resistive transition at low bias voltage and a negative differential resistance region with increase in bias voltage, which can be explained in terms of a two-step charge transport process, i.e., holes trapping and the following hole-electron recombination in CdSe/ZnS QDs embedded in PVK layer. EL spectra showed that the recombination center would be restricted to CdSe/ZnS QDs at high bias voltage, which is in well agreement with the I-V results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Charge trapping in hybrid electroluminescence device containing CdSe/ZnS quantum dots embedded in a conducting poly(N-vinylcarbozole) layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Taewhan | - |
dc.identifier.doi | 10.1063/1.3479528 | - |
dc.identifier.scopusid | 2-s2.0-77955760070 | - |
dc.identifier.wosid | 000280940900034 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.6, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | NANOCOMPOSITES | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | cadmium compounds | - |
dc.subject.keywordAuthor | conducting polymers | - |
dc.subject.keywordAuthor | electroluminescence | - |
dc.subject.keywordAuthor | electroluminescent devices | - |
dc.subject.keywordAuthor | electron-hole recombination | - |
dc.subject.keywordAuthor | hole traps | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | negative resistance | - |
dc.subject.keywordAuthor | semiconductor quantum dots | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3479528 | - |
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