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Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
- Authors
- Lee, Kimoon; Oh, Min Suk; Mun, Sung-jin; Lee, Kwang H.; Ha, Tae Woo; Kim, Jae Hoon; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Byoung H.; Sung, Myung M.; Im, Seongil
- Issue Date
- Aug-2010
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED MATERIALS, v.22, no.30, pp.3260 - 3265
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 22
- Number
- 30
- Start Page
- 3260
- End Page
- 3265
- ISSN
- 0935-9648
- Abstract
- Direct quantitative mapping of the density-of-states, named the photo-excited charge-collection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. [GRAPHICS] .
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Related Researcher
- Sung, Myung Mo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF CHEMISTRY)