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P2-13: Field emission characteristics of carbon nanotube forest on etched Si substrate
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jungwoo | - |
| dc.contributor.author | Park, Taehee | - |
| dc.contributor.author | Lee, Jongtaek | - |
| dc.contributor.author | Ahn, Juwon | - |
| dc.contributor.author | Shin, Mingyeong | - |
| dc.contributor.author | Yi, Whikun | - |
| dc.date.accessioned | 2022-12-20T16:25:23Z | - |
| dc.date.available | 2022-12-20T16:25:23Z | - |
| dc.date.created | 2022-09-16 | - |
| dc.date.issued | 2010-07 | - |
| dc.identifier.issn | 0000-0000 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174447 | - |
| dc.description.abstract | In this work, we investigatethe field emission characteristics of carbon nanotube forest on three types substrate: (1) mirror polished, (2) chemically etched (large pattern) and (3) chemically etched (small pattern) Si substrate. The surface morphology of CNTs forest was characterized by scanning electron microscopy (SEM), surface chemical state and electronic structure phase analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE | - |
| dc.title | P2-13: Field emission characteristics of carbon nanotube forest on etched Si substrate | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Yi, Whikun | - |
| dc.identifier.doi | 10.1109/IVNC.2010.5563155 | - |
| dc.identifier.scopusid | 2-s2.0-77958512949 | - |
| dc.identifier.bibliographicCitation | 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, pp.147 - 148 | - |
| dc.relation.isPartOf | 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 | - |
| dc.citation.title | 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 | - |
| dc.citation.startPage | 147 | - |
| dc.citation.endPage | 148 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Field-emission characteristics | - |
| dc.subject.keywordPlus | SEM | - |
| dc.subject.keywordPlus | Si substrates | - |
| dc.subject.keywordPlus | Surface chemical state | - |
| dc.subject.keywordPlus | Carbon nanotubes | - |
| dc.subject.keywordPlus | Electronic structure | - |
| dc.subject.keywordPlus | Field emission | - |
| dc.subject.keywordPlus | Nanoelectronics | - |
| dc.subject.keywordPlus | Raman spectroscopy | - |
| dc.subject.keywordPlus | Scanning electron microscopy | - |
| dc.subject.keywordPlus | Silicon | - |
| dc.subject.keywordPlus | Vacuum | - |
| dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
| dc.subject.keywordPlus | Substrates | - |
| dc.subject.keywordAuthor | Carbon nanotube | - |
| dc.subject.keywordAuthor | Chemical etched Si substrate | - |
| dc.subject.keywordAuthor | Field emission | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/5563155 | - |
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