Ceria CMP Slurry for the Construction of Floating Gates in MLC NAND Flash Memory below 51 nm
DC Field | Value | Language |
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dc.contributor.author | Kim, Ye-Hwan | - |
dc.contributor.author | Kim, Jong-Woo | - |
dc.contributor.author | Kim, Sang-Kyun | - |
dc.contributor.author | Paik, Ungyu | - |
dc.date.accessioned | 2022-12-20T16:29:24Z | - |
dc.date.available | 2022-12-20T16:29:24Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174463 | - |
dc.description.abstract | A ceria slurry, which is capable of high removal selectivity between silicon oxide and poly-Si, in the chemical mechanical planarization (CMP) process was investigated for the construction of poly-Si gates of a multilevel cell (MLC) NAND flash memory below 51 nm. Anionic phosphate fluorosurfactant was incorporated into the ceria slurry for use as a passivation agent to suppress poly-Si removal. The ceria slurry with fluorosurfactant showed high silicon oxide-to-poly-Si removal selectivity (295:1), resulting from the passivation layers on the poly-Si due to the selective adsorption of the fluorosurfactant. The selective adsorption behavior of the fluorosurfactant can be explained by the difference in surface characteristics between the oxide and the poly-Si, which was supported by the experimental results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Ceria CMP Slurry for the Construction of Floating Gates in MLC NAND Flash Memory below 51 nm | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Paik, Ungyu | - |
dc.identifier.doi | 10.1149/1.3466843 | - |
dc.identifier.scopusid | 2-s2.0-77955738234 | - |
dc.identifier.wosid | 000280769700010 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.10, pp.H339 - H342 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | H339 | - |
dc.citation.endPage | H342 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | CHEMICAL-MECHANICAL PLANARIZATION | - |
dc.subject.keywordPlus | POLY(ACRYLIC ACID) | - |
dc.subject.keywordPlus | REMOVAL | - |
dc.subject.keywordPlus | SELECTIVITY | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordAuthor | adsorption | - |
dc.subject.keywordAuthor | cerium compounds | - |
dc.subject.keywordAuthor | chemical mechanical polishing | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | flash memories | - |
dc.subject.keywordAuthor | logic gates | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | planarisation | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | slurries | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3466843 | - |
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