Charge Storage Variations of Organic Memory Devices Fabricated by Using C-60 Molecules Embedded in an Insulating Polymer Layer with Au and Al Electrodes

Abstract

Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing Buckminsterfullerene (060) were formed by using a spin coating method. Capacitance-voltage measurements on Al/C-60 embedded in PVP layer/p-Si (100) devices at 300 K showed a hysteresis with a large flat-band voltage shift due to the existence of C-60 molecules, indicative of the charge storage in the C, molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C-60 was significantly affected by the type of electrode. The endurance time of the organic memory device fabricated utilizing C-60 nanoparticles embedded in the PVP layer at 300 K was approximately 10 years, indicative of excellent memory endurance ability.