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Strain-Effectiveness of Gate-All-Around Field-Effect Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2022-12-20T16:58:29Z | - |
| dc.date.available | 2022-12-20T16:58:29Z | - |
| dc.date.issued | 20180703 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174698 | - |
| dc.title | Strain-Effectiveness of Gate-All-Around Field-Effect Transistors | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | AWAD 2018 | - |
| dc.citation.conferencePlace | Kitakyushu, Japan | - |
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Related Researcher
- OH, SAE ROON TER
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)