An implementation and switching characteristics comparison of power semiconductor based Marx generator using by SI-Thyristor and IGBT

Abstract

An employment of power semiconductor switch on the pulsed power applications becomes a reasonable due to its faster repetitive operating frequency, semi-permanent life, good reliability, and simple switching control by low signal modulation. Especially, at hard switching condition on the pulsed power application, series connection control methods of power semiconductor are generally preferred. However, in a certain case of pulse power application such as IEC (Inertial Electrostatic Confinement), high voltage switch that is composed of series connected power semiconductor has possibility to be unstable because of rapid impedance change on the reactor. Thus, we studied switching characteristics of Marx generator using by IGBT and SI-Thyristor. The Marx generator used IGBT was constructed and experimented. And SI-Thyristor driving circuit was designed and tested.