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Luminance Efficiency Enhancement in Green Organic Light-Emitting Devices Fabricated Utilizing a Cesium Fluoride/Fullerene Heterostructure Electron Injection Layer

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dc.contributor.authorYang, Ji Seong-
dc.contributor.authorChoo, Dong Chul-
dc.contributor.authorKim, Tae Whan-
dc.contributor.authorJin, You Young-
dc.contributor.authorSe, Ji Hyun-
dc.contributor.authorKim, Yong Kwan-
dc.date.accessioned2022-12-20T17:55:58Z-
dc.date.available2022-12-20T17:55:58Z-
dc.date.issued2010-05-
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175012-
dc.description.abstractEnhancement mechanisms of the luminance efficiency in green organic light-emitting devices (OLEDs) fabricated utilizing a cesium fluoride (CsF)/fullerene (C-60) heterostructure acting as an electron injection layer (EIL) were investigated. The luminance efficiencies as functions of the current density showed that the luminance efficiency in the green OLEDs fabricated utilizing a CsF/C-60 heterostructure acting as an EIL was higher than that in the green OLEDs fabricated utilizing a CsF, a Liq, or a C-60 single EIL. The interfacial dipole existing at the CsF layer decreased the electron injection barrier, and the stability of the OLEDs with a CsF EIL was enhanced due to the lower diffusion rate of Cs atoms in comparison with Li atoms. The enhancement of the luminance efficiency of the OLEDs with a heterostructure EIL was attributed to the increase in the electron injection. These results can help improve understanding of the enhancement mechanisms of the luminance efficiency in green OLEDs utilizing a CsF/C-60 heterostructure acting as an EIL.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Scientific Publishers-
dc.titleLuminance Efficiency Enhancement in Green Organic Light-Emitting Devices Fabricated Utilizing a Cesium Fluoride/Fullerene Heterostructure Electron Injection Layer-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1166/jnn.2010.2275-
dc.identifier.scopusid2-s2.0-77955002216-
dc.identifier.wosid000275626200128-
dc.identifier.bibliographicCitationJournal of Nanoscience and Nanotechnology, v.10, no.5, pp 3619 - 3622-
dc.citation.titleJournal of Nanoscience and Nanotechnology-
dc.citation.volume10-
dc.citation.number5-
dc.citation.startPage3619-
dc.citation.endPage3622-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusBUFFER LAYER-
dc.subject.keywordPlusDIODES-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusALUMINUM-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusCATHODE-
dc.subject.keywordPlusCSF-
dc.subject.keywordAuthorHeterostructure-
dc.subject.keywordAuthorElectron Injection Layer-
dc.subject.keywordAuthorCesium Fluoride-
dc.subject.keywordAuthorFullerene-
dc.subject.keywordAuthorDouble EIL-
dc.identifier.urlhttps://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000005/art00128-
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