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The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates
- Authors
- Lee, K. H.; Lee, J. Y.; Kwon, Y. H.; Ryu, S. Y.; Kang, T. W.; Jung, H. Y.; Park, S. H.; Lee, D. U.; Kim, T. W.
- Issue Date
- Apr-2010
- Publisher
- Elsevier BV
- Keywords
- Disordered system; Surface and interfaces; Nanostructures; Scanning and transmission electron microscopy
- Citation
- Solid State Communications, v.150, no.13-14, pp 636 - 639
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Solid State Communications
- Volume
- 150
- Number
- 13-14
- Start Page
- 636
- End Page
- 639
- ISSN
- 0038-1098
1879-2766
- Abstract
- An X-ray diffraction pattern (XRD) showed that GaN nanorods grown on Si(111) substrates were preferentially oriented along the [0001] direction. The transmission electron microscopy (TEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of (1100) and 01021 planes. The disordered nuclei of the GaN nanorods produced a two-dimensional thin-film layer near the GaN/Si(111) interfacial region. The relation between the microstructural properties and the geometry factors of the tip region for GaN nanorods formed on Si(111) substrates is described on the basis of the XRD and TEM results.
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