A first-principles approach to investigating the effects of Be, Mg and Zn on intrinsic n-type GaN systems
DC Field | Value | Language |
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dc.contributor.author | Lee, Sung-Ho | - |
dc.contributor.author | Ryu, Jeong Ho | - |
dc.contributor.author | Kim, Yoon-Suk | - |
dc.contributor.author | Oh, Yongsoo | - |
dc.contributor.author | Chung, Yong-Chae | - |
dc.date.accessioned | 2022-12-20T18:16:54Z | - |
dc.date.available | 2022-12-20T18:16:54Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175180 | - |
dc.description.abstract | The effects of p-type dopants on the structural and electronic properties of n-type intrinsic GaN systems were investigated using a first-principles approach. Nitrogen vacancies and oxygen substitutions were intentionally used to obtain an n-type intrinsic GaN system. The formation energy of the Be-doped n-type intrinsic GaN system based on nitrogen vacancies depended strongly on concentration, with a maximum energy difference of 4.87 eV. The incorporation of metallic cations (Be, Mg, and Zn) led to the formation of a p-type GaN system with desirable electronic properties that were attributed to charge transfer from partially occupied Ga-, N-, and O-s states to the p states of the metallic cations. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.title | A first-principles approach to investigating the effects of Be, Mg and Zn on intrinsic n-type GaN systems | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Chung, Yong-Chae | - |
dc.identifier.scopusid | 2-s2.0-77954649993 | - |
dc.identifier.wosid | 000277892400026 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.11, no.2, pp.273 - 276 | - |
dc.relation.isPartOf | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 273 | - |
dc.citation.endPage | 276 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001549689 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | DOPED GAN | - |
dc.subject.keywordPlus | BLUE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | ACTIVATION | - |
dc.subject.keywordAuthor | First-principles | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | LED | - |
dc.subject.keywordAuthor | Be doping | - |
dc.subject.keywordAuthor | Mg doping | - |
dc.subject.keywordAuthor | Zn doping | - |
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