Coupling Top- and Bottom-Gate ZnO Thin Film Transistors for Low Voltage, High Gain Inverter
DC Field | Value | Language |
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dc.contributor.author | Oh, Min Suk | - |
dc.contributor.author | Han, Jeong In | - |
dc.contributor.author | Lee, Kimoon | - |
dc.contributor.author | Lee, Byoung H. | - |
dc.contributor.author | Sung, Myung M. | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2022-12-20T18:42:57Z | - |
dc.date.available | 2022-12-20T18:42:57Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175318 | - |
dc.description.abstract | We reported on the fabrication of depletion-load-type ZnO thin film transistor (TFT) inverters coupling top-and bottom-gate TFTs that have 20 nm thin Al2O3 dielectrics grown by atomic layer deposition. Because the top-gate ZnO TFT showed a lower field-effect mobility of 0.1 cm(2)/V s than that of the bottom-gate device (2.4 cm(2)/V s), we used the top-and bottom-gate structures as driver and load transistors, respectively, to adjust the transition voltage of the inverter with an identical width/length dimension for both TFTs. Our ZnO inverter demonstrated an excellent voltage gain of similar to 41 at a low supply voltage of 5 V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Coupling Top- and Bottom-Gate ZnO Thin Film Transistors for Low Voltage, High Gain Inverter | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung M. | - |
dc.identifier.doi | 10.1149/1.3373521 | - |
dc.identifier.scopusid | 2-s2.0-77951186458 | - |
dc.identifier.wosid | 000276619300022 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.6, pp.II194 - II196 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | II194 | - |
dc.citation.endPage | II196 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3373521 | - |
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