Improved field emission properties of CdS deposited single walled carbon nanotube emitter

Abstract

A film of shaped CdS nanoparticle deposited single walled carbon nanotubes (CdS-SCWNTs) on silicon wafer is successfully fabricated by the method of layer-by-layer deposition cycle. The field emission (FE) properties of CdS-SWCNTs film are investigated for the first time. The film of CdS-SWCNTs exhibits better FE properties, a lower turn-on field, and a higher field enhancement factor than that of the film of pristine SWCNTs, for which the physical and chemical properties of the CdS nanoparticle have played an important role. As a II-VI semiconductor compound, CdS has attracted considerable interest in optoelectronic application because of its relatively low electron affinity, high chemical inertness, and sputter resistance.