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Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yun, Dong Yeol | - |
| dc.contributor.author | Jung, Jae Hun | - |
| dc.contributor.author | Lee, Dea Uk | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.contributor.author | Ryu, E. D. | - |
| dc.contributor.author | Kim, S. W. | - |
| dc.date.accessioned | 2022-12-20T18:54:19Z | - |
| dc.date.available | 2022-12-20T18:54:19Z | - |
| dc.date.issued | 2010-03 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175387 | - |
| dc.description.abstract | Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) (PVK) layer to investigate the variations in the electrical properties due to a CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVK layer/p-Si devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/p-Si devices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence of the CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that the retention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger than that for devices fabricated utilizing CdTe nanoparticles. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.3360215 | - |
| dc.identifier.scopusid | 2-s2.0-77950305575 | - |
| dc.identifier.wosid | 000276077200069 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.96, no.12, pp 1 - 3 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 96 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | QUANTUM DOTS | - |
| dc.subject.keywordAuthor | cadmium compounds | - |
| dc.subject.keywordAuthor | elemental semiconductors | - |
| dc.subject.keywordAuthor | II-VI semiconductors | - |
| dc.subject.keywordAuthor | nanoparticles | - |
| dc.subject.keywordAuthor | polymers | - |
| dc.subject.keywordAuthor | random-access storage | - |
| dc.subject.keywordAuthor | silicon | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3360215 | - |
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