Fabrication of Nanocrystalline Silicon Gratings Embedded within a Silicon Nitride Matrix by Femtosecond Laser-Induced Crystallization
DC Field | Value | Language |
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dc.contributor.author | Lee, Geon Joon | - |
dc.contributor.author | Lee, Kyoung-Min | - |
dc.contributor.author | Hong, Wan-Shick | - |
dc.contributor.author | Kim, Sung Soo | - |
dc.contributor.author | Cheong, Hyeonsik | - |
dc.contributor.author | Yoon, Chong Seung | - |
dc.contributor.author | Lee, YoungPak | - |
dc.date.accessioned | 2022-12-20T19:16:20Z | - |
dc.date.available | 2022-12-20T19:16:20Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175560 | - |
dc.description.abstract | Nanocrystalline silicon gratings were fabricated by applying both femtosecond-laser-interference crystallization and post thermal annealing to amorphous silicon (a-Si) nanoclusters embedded within a silicon nitride matrix. Catalytic chemical vapor deposition was used to fabricate the embedded a-Si nanoclusters, and the formation of a-Si nanoclusters was confirmed by photoluminescence spectroscopy. The femtosecond laser interference technique was employed to produce a seed pattern for the spatially-selected crystallization of a-Si nanoclusters. Micro-Raman spectroscopy and selected-area electron diffraction, together with high-resolution transmission-electron microscopy, show that nanocrystalline silicon gratings were formed through an amorphous-to-crystalline transformation with femtosecond laser pulses, and that the degree of crystallization was enhanced by applying post thermal annealing to the seed gratings. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Fabrication of Nanocrystalline Silicon Gratings Embedded within a Silicon Nitride Matrix by Femtosecond Laser-Induced Crystallization | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Chong Seung | - |
dc.identifier.doi | 10.1143/JJAP.49.015502 | - |
dc.identifier.scopusid | 2-s2.0-77950823148 | - |
dc.identifier.wosid | 000275607900043 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.1, pp.1 - 4 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MICROCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | OPTICAL GAIN | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | EMISSION | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.49.015502 | - |
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