p-GaN Activation by Electrochemical Potentiostatic Method

Abstract

An electrochemical potentiostatic activation method was examined to enhance the hole concentration of p-type GaN epitaxial layer. The hole concentration was more than double, with a mobility of 9-11 cm(2)/V s after an electric voltage was applied. At an optimal applied voltage of 3 V, the hole concentration was enhanced about 2.4 times from 1.9 x 10(17) to 4.5 x 10(17) cm(-3). The p-GaN films dissolved in the KOH solution at high applied voltages above 9 V. The secondary-ion mass spectrometry analysis indicated that nearly 70% of the hydrogen atoms were removed by this activation method.